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Beta gallium oxide ($\beta$-Ga$_2$O$_3$) shows significant promise in thehigh-temperature, high-power, and sensing electronics applications. However,long-term stable metallization layers for Ohmic contacts at high temperaturepresent unique thermodynamic challenges. The current most common Ohmic contactdesign based on 20 nm of Ti has been repeatedly demonstrated to fail at evenmoderately elevated temperatures (300-400$^{\circ}$C) due to a combination ofnon-stoichiometric Ti/Ga$_2$O$_3$ interfacial reactions and kinetically favoredTi diffusion processes. Here we demonstrate stable Ohmic contacts forGa$_2$O$_3$ devices operating up to 500-600$^{\circ}$C using ultrathin Tilayers with a self-limiting interfacial reaction. The ultrathin Ti layer in the5nm Ti / 100nm Au contact stack is designed to fully oxidize while forming anOhmic contact, thereby limiting both thermodynamic and kinetic instability.This novel contact design strategy results in an epitaxial conductive anatasetitanium oxide interface layer that enables low-resistance Ohmic contacts thatare stable both under long-term continuous operation (>500 hours) at600$^{\circ}$C in vacuum ($\leq$ 10$^{-4}$ Torr), as well as after repeatedthermal cycling (15 times) between room temperature and 550$^{\circ}$C inflowing N$_2$. This stable Ohmic contact design will accelerate the developmentof high-temperature devices by enabling research focus to shift towardsrectifying contacts and other interfacial layers.

Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $\beta$-Ga$_2$O$_3$ Devices