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This letter presents our findings on the recursive band gap engineering ofchiral fermions in bilayer graphene doubly aligned with hBN. By utilizing twointerfering moir\'{e} potentials, we generate a supermoir\'{e} pattern whichrenormalizes the electronic bands of the pristine bilayer graphene, resultingin higher-order fractal gaps even at very low energies. These Bragg gaps can bemapped using a unique linear combination of periodic areas within the system.To validate our findings, we used electronic transport measurements to identifythe position of these gaps as functions of the carrier density and establishtheir agreement with the predicted carrier densities and corresponding quantumnumbers obtained using the continuum model. Our work provides directexperimental evidence of the quantization of the area of quasi-Brillouin zonesin supermoir\'{e} systems. It fills essential gaps in understanding the bandstructure engineering of Dirac fermions by a recursive doubly periodicsuperlattice potential.

Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoir\'e potential