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We investigate the effect of a lower index oxide layer inclusion within ahighly doped silica glass slot waveguide for optimized supercontinuumgeneration at telecom wavelengths. By controlling the thickness of the oxideslot, we demonstrate that one can engineer the waveguide dispersion profile sothat to obtain supercontinua with vastly different spectral broadening dynamicsand bandwidths. Using this approach, we designed and fabricated a waveguidewith a low and flat dispersion profile of less than 43 ps/km/nm across awavelength range spanning over 1000 nm. We show that, when pumped at thetelecom C-band, we can generate a supercontinuum that spans over 1.5 octave,from approximately 817 nm to 2183 nm. The numerical simulations, whoseparameters are derived from the measured waveguide dimension and materialindices, exhibit good agreement with experimental measurements, where one canobserve both a qualitative and quantitative match in the supercontinuum overallspectrum and specific features (e.g. soliton and dispersive wave locations).This study represents an important step forward in the control and manipulationof dispersive and nonlinear dynamics in highly doped silica glass waveguides,paving the way towards advanced on-chip broadband light manipulation.

Supercontinuum generation in dispersion engineered highly doped silica glass waveguides