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The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boronnitride (hBN) has a great potential as a quantum sensor in a two-dimensionalmaterial that can directly probe various external perturbations in atomic-scaleproximity to the quantum sensing layer. Here, we apply first principlescalculations to determine the coupling of the $\text{V}_\text{B}^{-}$electronic spin to strain and electric fields. Our work unravels the interplaybetween local piezoelectric and elastic effects contributing to the finalresponse to the electric fields. The theoretical predictions are then used toanalyse optically detected magnetic resonance (ODMR) spectra recorded on hBNcrystals containing different densities of $\text{V}_\text{B}^{-}$ centres. Weprove that the orthorhombic zero-field splitting parameter results from localelectric fields produced by surrounding charge defects. By providingcalculations of the spin-strain and spin-electric field couplings, this workpaves the way towards applications of $\text{V}_\text{B}^{-}$ centres forquantitative electric field imaging and quantum sensing under pressure.

A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields