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We investigated the thermoelectric properties of the 2D monolayer of WX2N4using Density Functional Theory combined with Boltzmann Transport Equation. Weobtained an outstanding thermoelectric figure of merit of 0.91 at 400K forp-type WGe2N4, whether it showed a ZT value of 0.56 for n-type at the sametemperature. On the other hand, the WSi2N4 showed significantly low ZT at roomtemperature.

Low-Temperature Thermoelectric Performance and Optoelectronic Properties of Monolayer of WX2N4(X = Si, Ge)