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Magnon spin transport in a metal-antiferromagnetic insulator-ferromagneticinsulator heterostructure is considered. The spin current is generated via thespin Seebeck effect and in the limit of clean sample where the effects ofinterface imperfections and lattice defects are excluded. For NiO as anantiferromagnetic insulator we have a magnetic order of antiferromagneticallycombined planes which are internally in ferromagnetic order. We find that thesign of the spin current depends on the magnetization direction of the planenext to the metal resulting in an even-odd effect for the spin current.Moreover, as long as damping is excluded, this even-odd effect is the onlyremaining dependence on the NiO thickness for high temperatures.

Even-odd effect for spin current through thin antiferromagnetic insulator