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We demonstrate ion irradiation as a wafer-scale method for the fabrication ofamorphous superconducting thin films. We explore irradiation using argon andgallium ions on single-element and compound materials. Our results indicatethat both ions increase disorder in the atomic structure in a qualitativelysimilar manner, i.e., they destroy the grain structure, increase resistivityand alter the superconducting transition temperature. However, argonirradiation tends to yield gas pockets that can be detrimental forapplications. We show that gallium irradiation allows to produce a thin,uniform, and amorphous molybdenum silicide film that is promising, e.g., forsuperconducting nanowire single-photon detectors.

Wafer-scale method for amorphizing superconducting thin films