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Two-dimensional material-based field effect transistors (2DM-FETs) areplaying a revolutionary role in electronic devices. However, after years ofdevelopment, no device model can match the Pao-Sah model for standardsilicon-based transistors in terms of physical accuracy and computationalefficiency to support large-scale integrated circuit design. One remainingcritical obstacle is the contacts of 2DM-FETs. In order to self-consistentlyinclude the contact effect in the current model, it is necessary to performself-consistent calculations, which is a fatal flaw for applications thatprioritize efficiency. Here, we report that the Landauer-QFLPS modeleffectively overcomes the above contradiction, where QFLPS meansquasi-Fermi-level phase space theory. By connecting the physical pictures ofthe contact and the intrinsic channel part, we have successfully derived adrain-source current formula including the contact effect. To verify the model,we prepared transistors based on two typical 2DMs, black phosphorus (BP) andmolybdenum disulfide (MoS2), the former having ambipolar transport and thelatter showing electron-dominant unipolar transport. The proposed new formulacould describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover,compared with traditional methods, the proposed model has the advantages ofaccuracy and efficiency, especially in describing non-monotonic drainconductance characteristics, because the contact effect is self-consistentlyand compactly packaged as an exponential term. More importantly, we alsoexamined the model at the circuit level. Here, we fabricated a three-bitthreshold inverter quantizer circuit based on ambipolar-BP process andexperimentally demonstrated that the model can accurately predict the circuitperformance. This industry-benign 2DM-FET model is supposed to be very usefulfor the development of 2DM-FET-based integrated circuits.

Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors