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Current portable memory device relies heavily on flash memory technology forits implementation. New generation of non-volatile memory is likely to replacefloating gates, charge-trapping memory currently still suffering frominadequate retention performance and slow programming speeds as well as smallmemory window. In contrast, the use of HfO$_2$/Al$_2$O$_3$ stacked high-kmaterials has substantially increased the memory window of memory devices, witha 63% increase relative to pure HfO$_2$ materials. The current goal of up to80% retention characteristics over a ten-year period has been achieved byadjusting the deposition ratio or dopant material. Process conditions cancontinue to be investigated in the future to reduce charge loss whilemaintaining the increased memory window.

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate