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In this paper, we report the theoretical investigation and experimentalrealization of a new spin-gapless semiconductor (SGSs) compound CoFeMnSnbelonging to the family of quaternary Heusler alloys. Through the use ofseveral ground-state energy calculations, the most stable structure has beenidentified. Calculations of the spin-polarized band structure in optimizedstructure's reveals the SGS nature of the compound. The compound form in anordered crystal structure and exhibit a high ferromagnetic transitiontemperature (T$_{\rm C}$ = 560 K), making the material excellent for roomtemperature applications. Adherence of saturation magnetization to theSlater-Pauling rule, together with the nearly temperature-independentresistivity, conductivity, and carrier concentration of the compound in thetemperature regime 5$-$300 K along with the low value of anomalous Hallconductivity (AHC) further confirms the SGS nature. Theoretical calculationsalso reveal the robustness of the SGS state due to lattice contraction and onecan obtain a high value of intrinsic AHC using hole doping. Combined SGS andtopological properties of the compound make CoFeMnSn suitable for spintronicsand magneto-electronics devices.

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn