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The possibility of creating heterostructure of two-dimensional (2D) materialshas emerged as a viable route towards realizing novel optoelectronic devices.However, the low light absorption due to their small absorption cross section,limits their realistic application. While light-matter interaction mediated bystrong exciton-plasmon coupling has been demonstrated to improve absorbance andspontaneous emission in a coupled TMDC and metallic nanostructures, thefabrication of tunable broadband phototransistor with high quantum yield isstill a challenging task. By synthesizing Ag nanoparticles (Ag NPs) capped witha thin layer of polyvinylpyrrolidone (PVP) through chemical route, we report alithography-free fabrication of a large area broadband superior gate-tunablehybrid phototransistor based on monolayer graphene decorated by WS$_2$-Ag NPsin a three-terminal device configuration. The fabricated device exhibitsextremely high photoresponsivity (up to $3.2\times 10^4$ A/W) which is morethan 5 times higher than the bare graphene/WS$_2$ hybrid device, along with alow noise equivalent power (NEP) (~10$^{-13}$ W/Hz$^{0.5}$, considering 1/fnoise) and high specific detectivity ~1010 Jones in the wide (325-730 nm)wavelength region. The additional PVP capping of Ag NPs helps to suppress thedirect charge and heat transfer and most importantly, increases the devicestability by preventing the degradation of WS$_2$-Ag hybrid system. Theenhanced optical properties of the hybrid device are explained via dipolemediated strong exciton-plasmon coupling, corroborated by COMSOL Multiphysicssimulation. Our work demonstrates a strategy towards obtaining anenvironment-friendly, scalable, high-performance broadband phototransistor bytuning the exciton-plasmon coupling for new generation opto-electronic devices.

Exciton-Plasmon Coupling Mediated Superior Photoresponse in 2D Hybrid Phototransistors