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In this work, we propose an intrinsic mechanism to understand the even-oddeffect, namely the opposite signs of the anomalous Hall resistance and thedifferent shapes of hysteresis loops for even and odd septuple layers (SLs), ofMBE-grown MnBi2Te4 thin films with electron doping. In particular, we show thatthe non-zero hysteresis loops in the anomalous Hall and magnetic circulardichroism measurements for even-SLs MnBi2Te4 films are originated from twodifferent anti-ferromagnetic (AFM) states with opposite magnetoelectriccoefficients that give rise to different energies of zeroth Landau levels ofthe surface states in this model. The complex form of the anomalous Hallhysteresis loop in even-SLs MnBi2Te4 films can be understood from two magnetictransitions, a transition from one AFM state to the other AFM state followed bya second transition to the ferromagnetic state. Our model also provides amicroscopic understanding of the electrical switching between two AFM statesvia the axion electrodynamics in even-SL MnBi2Te4 films. We further studyorbital magnetization and magnetoelectric coefficient in MnBi2Te4 films, andfind an even-odd oscillation behavior of the magnetoelectric coefficient.

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4