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Silicon Dangling Bonds have established themselves as a promising competitorin the field of beyond-CMOS technologies. Their integration density andpotential for energy dissipation advantages of several orders of magnitude overconventional circuit technologies sparked the interest of academia and industryalike. While fabrication capabilities advance rapidly and first designautomation methodologies have been proposed, physical simulation effectivenesshas yet to keep pace. Established algorithms in this domain either suffer fromexponential runtime behavior or subpar accuracy levels. In this work, wepropose a novel algorithm for the physical simulation of Silicon Dangling Bondsystems based on statistical methods that offers both a time-to-solution and anaccuracy advantage over the state of the art by more than one order ofmagnitude and a factor of more than three, respectively, as demonstrated by anexhaustive experimental evaluation.

QuickSim: Efficient and Accurate Physical Simulation of Silicon Dangling Bond Logic