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Lead free, silicon compatible materials showing large electromechanicalresponses comparable to, or better than conventional relaxor ferroelectrics,are desirable for various nanoelectromechanical devices and applications.Defect-engineered electrostriction has recently been gaining popularity toobtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, wereport record values of electrostrictive strain coefficients (M31) atfrequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanatethin-films, epitaxially integrated onto Si. The effect is robust and retainedeven after cycling the devices >5000 times. Our perovskite films arenon-ferroelectric, exhibit a different symmetry compared to stoichiometricBaTiO3 and are characterized by twin boundaries and nano polar-like regions. Weshow that the dielectric relaxation arising from the defect-induced featurescorrelates very well with the observed giant electrostrictive response. Thesefilms show large coefficient of thermal expansion (2.36 x 10-5/K), which alongwith the giant M31 implies a considerable increase in the lattice anharmonicityinduced by the defects. Our work provides a crucial step forward towardsformulating guidelines to engineer large electromechanical responses even athigher frequencies in lead-free thin films.

Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100