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Achieving large-scale growth of two-dimensional (2D) ferromagnetic materialswith high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) ishighly desirable for the development of ultra-compact magnetic sensors andmagnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as apromising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K.Moreover, both PMA and TC might be adjusted in ultrathin films by engineeringcomposition, strain, or applying an electric field. In this work, wedemonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures offive-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials:graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator).By combining structural and chemical analysis down to the atomic level with abinitio calculations, we confirm the single crystalline character of Cr2Te3films on the 2D materials with sharp vdW interfaces. They all exhibit PMA andTC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm thisPMA and show how its strength depends on strain. Finally, Hall measurementsreveal a strong anomalous Hall effect, which changes sign at a giventemperature. We theoretically explain this effect by a sign change of the Berryphase close to the Fermi level. This transition temperature depends on the 2Dmaterial in proximity, notably as a consequence of charge transfer. MBE-grownCr2Te3/2D material bilayers constitute model systems for the furtherdevelopment of spintronic devices combining PMA, large spin-orbit coupling andsharp vdW interface.

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials