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In two-dimensional (2D) van der Waals (vdW) layered materials the applicationof pressure often induces a giant lattice collapse, which can subsequentlydrive an associated Mott transition. Here, we investigate room-temperaturelayer-dependent insulator-metal transition (IMT) and probable spin-crossover(SCO) in vdW magnet, FePS$_3$, under high-pressure using micro-Ramanscattering. Experimentally obtained spectra, in agreement with the computedRaman modes, indicate evidence of IMT of FePS$_3$ started with athickness-dependent critical pressure ($P_c$) which reduces to 1.5 GPa intrilayer flakes compared to 10.8 GPa for the bulk counterpart. Using aphenomenological model, we argue that strong structural anisotropy in few-layerflakes enhances the in-plane strain under applied pressure and is, therefore,ultimately responsible for reducing the critical pressure for the IMT withdecreasing layer numbers. Reduction of the critical pressure for phasetransition in vdW magnets to 1-2 GPa marks the possibility of usingintercalated few-layers in the field-effect transistor device architecture, andthereby, avoiding the conventional use of the diamond anvil cell (DAC).

Pressure induced insulator-to-metal transition in few-layer FePS$_3$ at 1.5 GPa