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Tunneling light-emitting devices (LEDs) based on transition metaldichalcogenides (TMDs) and other 2D materials are a new platform for on-chipoptoelectronic integration. Some of the physical processes underlying this LEDarchitecture are not fully understood, especially the emission at photonenergies higher than the applied electrostatic potential, so-called overbiasemission. Here we report overbias emission for potentials that are near half ofthe optical bandgap energy in TMD-based tunneling LEDs. We show that thisemission is not thermal in nature, but consistent with exciton generation via atwo-electron coherent tunneling process.

Overbias photon emission from light-emitting devices based on monolayer transition metal dichalcogenides