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We implemented radio frequency-assisted electrostatic force microscopy(RF-EFM) to investigate the electric field response of biaxially strainedmolybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles,produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, asemiconducting transition metal dichalcogenide, has recently attractedsignificant attention due to its promising optoelectronic properties, furthertunable by strain. Here, we take advantage of the RF excitation to distinguishthe intrinsic quantum capacitance of the strained ML from that due to atomicscale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. Infact, at frequencies fRF larger than the inverse defect trapping time, thedefect contribution to the total capacitance and to transport is negligible.Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubbletopography and its quantum capacitance. Our finite-frequency capacitanceimaging technique is non-invasive and nanoscale, and can contribute to theinvestigation of time and spatial-dependent phenomena, such as the electroncompressibility in quantum materials, which are difficult to measure by othermethods.

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy