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Due to its tunable band gap, anisotropic behavior, and superiorthermoelectric properties, device applications using layered tellurene (Te) arebecoming attractive. Here, we report a thinning technique for exfoliatedtellurene nanosheets using thermal annealing in an oxygen environment. Wecharacterize different thinning parameters including temperature and annealingtime. Based on our measurements, we show that controlled layer thinning occursin the narrow temperature range of 325 oC to 350 oC. We also show a reliablemethod to form \b{eta}-tellurene oxide (\b{eta}- TeO2), which is an emergingwide band gap semiconductor with promising electronic and optoelectronicproperties. This wide band gap semiconductor exhibits a broad photoluminescence(PL) spectrum with multiple peaks covering the range 1.76 eV to 2.08 eV. ThisPL emission coupled with Raman spectra are strong evidence of the formation of2D \b{eta}- TeO2. We discuss the results obtained and the mechanisms of Tethinning and \b{eta}-TeO2 formation at different temperature regimes. We alsodiscuss the optical band gap of \b{eta}-TeO2 and show the existence ofpronounced excitonic effects evident by the large exciton binding energy inthis 2D \b{eta}-TeO2 system that reach 1.54 eV to 1.62 eV for bulk tomonolayer, respectively. Our work can be utilized to have better control overTe nanosheet thickness. It also sheds light on the formation of well-controlled\b{eta}-TeO2 layered semiconductor for electronic and optoelectronicapplications.

Exploring Layer Thinning of Exfoliated \b{eta}-Tellurene and Room Temperature Photoluminescence with Large Exciton Binding Energy Revealed in TeO2