English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

To develop effective thermal management strategies for GaN transistors, it isessential to accurately predict the device junction temperature. Since thewidth of the heat generation in the devices is comparable to phonon mean freepaths of GaN, phonon ballistic transport exists and can significantly affectthe heat transport process, which necessitates a thorough understanding of theinfluence of the phonon ballistic effects in GaN transistors. In this paper,the ballistic-diffusive phonon transport in GaN-on-SiC devices is examined bymeasuring the hotspot temperature using the thermoreflectance thermal imagingTTI combined with the hybrid phonon Monte Carlo-diffusion simulations. A seriesof Au heaters are fabricated on the top of the GaN layer to quantitativelymimic the different heat source distributions during device operation. Theexperimental and simulation results show a good consistency and both indicatethat the phonon ballistic effects can significantly increase the hotspottemperature. With the size of the heat source decreasing, the errors ofFourier's law-based predictions increase, which emphasizes the necessity tocarefully consider the phonon ballistic transport in device thermalsimulations.

Observation of ballistic-diffusive thermal transport in GaN transistors using thermoreflectance thermal imaging