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With the deceleration of dimensional and voltage scaling in CMOStechnologies, the demand for novel logic devices has never been greater. Whilespin-based devices present a major opportunity towards favorable scaling,switching energies are still orders of magnitude above the expected values.Alternatively, magnetoelectric materials are predicted to enable low-powercontrol of magnetization, a relatively unexplored pathway with sparse resultsat a device level. Here, we demonstrate voltage-based magnetization switchingand reading in nanodevices at room temperature, enabled by exchange couplingbetween multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, andspin-to-charge current conversion between CoFe and Pt, for the reading. Unlikeother current-based spintronic devices, magnetization writing is driven solelyby voltage pulses. We show that, upon electrical switching of the BiFeO$_3$,the magnetization of the CoFe can be reversed, giving rise to different voltageoutputs. The voltage-induced switching is supported through a combination ofpiezoresponse, magnetic force microscopy, and scanning nitrogen-vacancymagnetometry, where magnetization reversal is linked with the polarizationstate and antiferromagnetic cycloid propagation direction in the BiFeO$_3$.This study constitutes the building block for magnetoelectric spin-orbit logic,as well as a new avenue for low-power beyond-CMOS technologies.

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices