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Qubit control electronics composed of CMOS circuits are of critical interestfor next generation quantum computing systems. A CMOS-based applicationspecific integrated circuit (ASIC) fabricated in 14nm FinFET technology wasused to generate and sequence qubit control waveforms and demonstrate atwo-qubit cross resonance gate between fixed frequency transmons. Thecontroller was thermally anchored to the T = 4K stage of a dilutionrefrigerator and the measured power was 23 mW per qubit under active control.The chip generated single--side banded output frequencies between 4.5 and 5.5GHz with a maximum power output of -18 dBm. Randomized benchmarking (RB)experiments revealed an average number of 1.71 instructions per Clifford (IPC)for single-qubit gates, and 17.51 IPC for two-qubit gates. A single-qubit errorper gate of $\epsilon_{\text{1Q}}$=8e-4 and two-qubit error per gate of$\epsilon_\text{2Q}$=1.4e-2 is shown. A drive-induced Z-rotation is observed byway of a rotary echo experiment; this observation is consistent with expectedqubit behavior given measured excess local oscillator (LO) leakage from theCMOS chip. The effect of spurious drive induced Z-errors is numericallyevaluated with a two-qubit model Hamiltonian, and shown to be in good agreementwith measured RB data. The modeling results suggest the Z-error varies linearlywith pulse amplitude.

Using Cryogenic CMOS Control Electronics To Enable A Two-Qubit Cross-Resonance Gate