English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promisingband gap-tunable semiconductor material for optoelectronic applications. Inthis study, a novel DC reactive sputtering protocol was developed to fabricateZnO$_x$N$_y$ films with varying elemental concentrations, by preciselycontrolling the working pressure. The band gap was rigorously analyzed usingUV-Visible spectroscopy, which was complemented by EDAX spectroscopy todetermine the variations in the elemental composition. The correlation betweenthe microstructure and band gap was investigated through the application ofAFM, XRD, and Raman spectroscopy, while the Urbach theorem was used to evaluatethe defect states. This study revealed the existence of intermediate structuresformed during the tuning of the band gap, which can have important implicationsfor future research aimed at developing heterostructures and 2D superlatticesfor photonics applications.

Band Gap Tuning of DC Reactively Sputtered ZnON Thin Films