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The peculiar defect-related photon emission processes in 2D hexagonal boronnitride (hBN) have become a topic of intense research due to their potentialapplications in quantum information and sensing technologies. Recent effortshave focused on activating and modulating the defect energy levels in hBN bymethods that can be integrated on a chip, and understanding the underlyingphysical mechanism. Here, we report on exotic single photon and enhanceddeep-level emissions in 2D hBN strain superlattice, which is fabricated bytransferring multilayer hBN onto hexagonal close-packed silica spheres onsilica substrate. We realize effective activation of the single photonemissions (SPEs) in the multilayer hBN at the positions that are in contactwith the apex of the SiO2 spheres. At these points, the local tensile straininduced blue-shift of the SPE is found to be up to 12 nm. Furthermore, highspatial resolution cathodoluminescence measurments show remarkablestrain-enhanced deep-level (DL) emissions in the multilayer hBN with theemission intensity distribution following the periodic hexagonal pattern of thestrain superlattice. The maximum DL emission enhancement is up to 350% with aenergy redshift of 6 nm. Our results provide a simple on-chip compatible methodfor activating and tuning the defect-related photon emissions in multilayerhBN, demonstrating the potential of hBN strain superlattice as a building blockfor future on-chip quantum nanophotonic devices.

Exotic single-photon and enhanced deep-level emissions in hBN strain superlattice