English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Recently, cold source transistor (CSFET) with steep-slope subthreshold swing(SS) < 60 mV/decade has been proposed to overcome Boltzmann tyranny in itsballistic regime. However the scattering, especially by inelastic scatteringmay lead serious SS degradation through cold carrier thermalization. In thisstudy, the electronic excitation/relaxation dynamic process is investigatedtheoretically by virtue of the state-of-the-art nonadiabatic molecular dynamics(NAMD) method, i.e., the mixed quantum-classical NAMD. The mixedquantum-classical NAMD considers both carrier decoherence and detailed balanceto calculate the cold carrier thermalization and transfer processes insemiconductor Si, and metallic silicide (NiSi2 and CoSi2). The dependence ofthe thermalization factor, relaxation time, scattering time and scattering rateon energy level are obtained. The thermalization of carrier gradually increasesfrom low energy to high energy. Partially thermalization from the ground stateto reach the thermionic current window is realized with sub-100 $fs$ timescale. Fully thermalization to entail energy region depends on the barrierheight sensitively, i.e., the scattering rate decreases exponentially as theenergy of the out-scattering state increase. The scattering rate of NiSi2 andCoSi2 is 2 orders of magnitude higher than that of Si, arising from theirhigher density of states than that in Silicon This study can shed light on thematerial design for low power tunneling FET as well as the emerging CSFET.

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach