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Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPautilizing a novel electrical circuit are presented. The electrical circuit usespiezosensitive differential amplifier with negative feedback loop (PDA-NFL)based on two bipolar-junction transistors (BJT). The BJT has a verticalstructure of n-p-n type (V-NPN) formed on a non-deformable chip area. Thecircuit contains eight piezoresistors located on a profiled membrane in theareas of maximum mechanical stresses. The experimental results prove thatpressure sensor chip PDA-NFL with 4.0x4.0 mm2 chip area has sensitivity S =7.8...12.4 mV/V/kPa with nonlinearity of 2KNL = 0.14...0.38 %/FS (pressure isapplied from the back side of pressure sensor chip).

Pressure Sensor Chip with New Electrical Circuit for 10 kPa Range