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Thin film deposition technologies boost the development of modernsemiconductor industries. Being a fancy variant, vapor phase deposition onmetal nanoparticles (often in liquid phase) rather than on bare substratesopens novel avenues of fabricating low-dimensional nanomaterials, which rendersthe development of new device architectures and their applications in advancedelectronics, optoelectronics and photonics, etc. Since the last twenty years,nanomaterials with various geometries (i.e. dots, wires, trees, tubes, flakes,ribbons, etc.) have been synthesized via different bottom-up methods (i.e.vapor-liquid-solid, vapor-solid-solid, in plane solid-liquid-solid, etc.) bydifferent deposition techniques (CVD, PECVD, MOCVD, MBE, etc.). In contrastwith liquid phase epitaxy where metal liquid severs as stationary reservoirthat accommodates gaseous precursors, metal droplets have to be kicked offin-plane on/out-of-plane from the substrates so as to steer the growth oflow-dimensional nanomaterials. In this review, we shall regard the growthprocess in a viewpoint of dynamic droplet evolution under vapor phasedeposition. We shall summarize several key factors that affect the dropletspreading behaviors and their consequent nanofluidic transport, which involvesdeposition parameters, solid-liquid interfaces, crystal phases, substratenanofacets and so on, which deterministically results in various morphologiesand growth directions of the nanomaterials. Reversely, the aspects like dopingprofile and phase transition that are strongly dependent on the droplettransport will also be discussed.

Droplet nanofluidic transport under vapor deposition: a review on seeded growth of low-dimensional nanomaterials