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The ability to spatially resolve the carrier mobility profile along the crosssection of micrometer-thin solar cells is vital both for fundamental studies inphotovoltaics and as a quality control for reproducibly obtaining highconversion efficiencies in commercial solar cell modules. Presently, notechnique capable of such an endeavor is available to the best of ourknowledge. Here, we introduce a novel method capable of profiling the carriermobility along the z-axis in thin-film photovoltaics. Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p-CELIV (cs-p-CELIV) system. As geminaterecombination of excess carriers is the most frequent radiative pathway forelectrons and holes in solar cells at low power density of illumination, whilenongeminate recombination dominates at high power, enhanced nongeminaterecombination occurs at the SCOM focal plane. Thus, the cs-p-CELIV signalprovides enhanced information on the mobility of all of the cross-sectionallayers, except for the focal plane. By scanning the focal plane along thez-axis, the mobility profile can be derived. To demonstrate our technique, weuse it to investigate the carrier mobility in a hydrogenated amorphous silicon(a-Si:H) solar cell. The mobility profile obtained by cs-p-CELIV correlateswell with the H content profile, measured independently, and is in excellentagreement with models suggesting a critical role of Si-H bonding in locallydetermining the carrier mobility in a-Si:H.

Cross-sectional profile of photocarrier mobility in thin film solar cell  via nongeminate recombination and charge extraction by linearly increasing  voltage (cs-p-CELIV)