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Ultrafast manipulation of magnetic order has challenged our understanding thefundamental and dynamic properties of magnetic materials. So far single shotmagnetic switching has been limited to ferrimagnetic alloys and multilayers. Inferromagnetic (FM)/antiferromagnetic (AFM) bilayers, exchange bias (He) arisesfrom the interfacial exchange coupling between the two layers and reflects themicroscopic orientation of the antiferromagnet. Here we demonstrate thepossibility of single shot switching of the antiferromagnet (change of the signand amplitude of He) with a single femtosecond laser pulse in IrMn/CoGdbilayers. We demonstrate the switching for a wide range of fluences fordifferent layer thicknesses and compositions. Atomistic simulations predictultrafast switching and recovery of the AFM magnetization on a timescale of 2ps. These results provide the fastest and the most energy-efficient method toset the exchange bias and pave the way to potential applications for ultrafastspintronic devices.

Single-shot laser-induced switching of an exchange biased antiferromagnet