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In Mott materials strong electron correlation yields a spectrum of complexelectronic structures. Recent synthesis advancements open realisticopportunities for harnessing Mott physics to design transformative devices.However, a major bottleneck in realizing such devices remains the lack ofcontrol over the electron correlation strength. This stems from the complexityof the electronic structure, which often veils the basic mechanisms underlyingthe correlation strength. Here, we present control of the correlation strengthby tuning the degree of orbital overlap using picometer-scale latticeengineering. We illustrate how bandwidth control and concurrent symmetrybreaking can govern the electronic structure of a correlated $SrVO_3$ modelsystem. We show how tensile and compressive biaxial strain oppositely affectthe $SrVO_3$ in-plane and out-of-plane orbital occupancy, resulting in thepartial alleviation of the orbital degeneracy. We derive and explain thespectral weight redistribution under strain and illustrate how high tensilestrain drives the system towards a Mott insulating state. Implementation ofsuch concepts will drive correlated electron phenomena closer towards new solidstate devices and circuits. These findings therefore pave the way forunderstanding and controlling electron correlation in a broad range offunctional materials, driving this powerful resource for novel electronicscloser towards practical realization.

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal