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Silicon modulators are key components in silicon photonics to support thedense integration of electro-optic (EO) functional elements on a compact chipfor various applications including high-speed data transmission, signalprocessing, and photonic computing. Despite numerous advances in promoting theoperation speed of silicon modulators, a bandwidth ceiling of 67 GHz emerges inpractices and becomes an obstacle to paving silicon photonics toward Tbps leveldata throughput on a single chip. Here, we theoretically propose andexperimentally demonstrate a design strategy for silicon modulators byemploying the slow light effect, which shatters the present bandwidth ceilingof silicon modulators and pushes its limit beyond 110 GHz in a small footprint.The proposed silicon modulator is built on a coupled-resonator opticalwaveguide (CROW) architecture, in which a set of Bragg gratings areappropriately cascaded to give rise to a slow light effect. By comprehensivelybalancing a series of merits including the group index, photon lifetime,electrical bandwidth, and losses, we found the modulators can benefit from theslow light for better modulation efficiency and compact size while remainingtheir bandwidth sufficiently high to support ultra-high-speed datatransmission. Consequently, we realize a modulator with an EO bandwidth of 110GHz in a length of 124 {\mu}m, and demonstrate a data rate beyond 110 Gbps byapplying simple on-off keying modulation for a DSP-free operation. Our workproves that silicon modulators beyond 110 GHz are feasible, thus shedding lighton the potentials of silicon photonics in ultra-high-bandwidth applicationssuch as data communication, optical interconnection, and photonic machinelearning.

Slow light silicon modulator beyond 110 GHz bandwidth