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Bismuth (Bi) films hold potential for spintronic devices and topologicalone-dimensional edge transport. Large-area high-quality (111) Bi ultrathinfilms are grown on InSb (111)B substrates. Strong film-substrate interactionsepitaxially stabilize the (111) orientation and lead to inversion symmetrybreaking. We resolve the longstanding controversy over the Z_2 topologicalassignment of bismuth and show that the surface states are topologicallytrivial. Our results demonstrate that interfacial bonds prevent thesemimetal-to-semiconductor transition predicted for freestanding bismuthlayers, highlighting the importance of controlled functionalization and surfacepassivation in two-dimensional materials.

Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films