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Quantum dots consisting of an axial Zn0.97Mg0.03Te insertion inside a largebandgap Zn0.9Mg0.1Te nanowire cores are fabricated in a molecular beam epitaxysystem by employing the vapor-liquid-solid growth mechanism. Additionally, thisstructure is coated with a thin ZnSe radial shell which forms type II interfacewith the dot semiconductor. The resulting radial electron-hole separation isevidenced by several distinct effects which occur in the presence of ZnSeshell, including: the optical emission redshift of about 250 meV, a significantdecrease of the emission intensity, the increase of the excitonic lifetime byone order of magnitude and the increase of the biexciton binding energy. Thetype II nanowire quantum dots where electrons and holes are radially separatedconstitute a promising platform for potential applications in the field ofquantum information technology.

Carrier separation in type II quantum dots inserted in (Zn,Mg)Te/ZnSe nanowire