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Metal deposition with cryogenic cooling is widely utilized in the condensedmatter community for producing ultra-thin epitaxial superconducting layers onsemiconductors. However, a drawback arises when these films return to roomtemperature, as they tend to undergo dewetting. This issue is mitigated bycapping the films with an amorphous layer. In this study, we examined theimpact of different in-situ fabricated caps on the structural characteristicsof Sn thin films deposited at 80 K on InSb substrates. Regardless of the typeof capping, we observed that the films remained smooth upon returning to roomtemperature and were epitaxial on InSb in the cubic Sn ($\alpha$-Sn) phase.However, we noted a correlation between alumina capping with an electron beamevaporator and an increased presence of tetragonal Sn ($\beta$-Sn) grains. Thissuggests that heating from the alumina source may contribute to a partial phasetransition in the Sn layer. The existence of the $\beta$-Sn phase inducedsuperconducting behavior of the films by percolation effect. This studyhighlights the potential for modifying the structural properties of cryogenicSn thin films through in-situ capping, paving the way for precise control inthe production of superconducting Sn films for integration into quantumcomputing platforms.

Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates