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Many technologies require highly-oriented and textured functional thin films.The most common synthe-sis approaches use on-axis sputter geometries. However,in some scenarios, on-axis sputtering is not feasible. During ionized physicalvapor deposition (PVD), in contrast to conventional PVD, the film-formingspecies can be accelerated onto the growing film using substrate-biaspotentials. This increas-es the ad-atom mobility, but also deflects thetrajectory of ions towards the substrate increasing the texture of the growingfilm. However, potential gas-ion incorporation in the films limits thefeasibility of such approaches for the deposition of defect-sensitivematerials. In this work, we report on the oblique-angle deposition of highlyc-axis oriented AlN (0002) films, enabled by reactive metal-ion syn-chronizedHiPIMS. The effect of critical deposition parameters, such as the magneticconfiguration, ion kinetic energies and substrate biasing are investigated. Thefilms deposited using HiPIMS show a more pronounced texture and orientationcompared to DCMS films. We find that combining the HiPIMS dep-ositions with amoderate substrate bias of -30 V is sufficient to improve the crystallinequality and tex-ture of the films significantly. To reduce process-gasincorporation, and the formation of point defects, the negative substrate-biaspotential is synchronized to the Al-rich fraction of each HiPIMS pulse. Thisleads to reduced Ar-Ion incorporation and improves the structural properties.The films also show uni-form polarization of the grains making this synthesisroute suitable for piezoelectric applications. While the compressive stress inthe films is still high, the results demonstrate, that synchronized HiPIMS canyield promising results for the synthesis under oblique-angle depositionconditions - even with low substrate-bias potentials.

Improving the crystallinity and texture of oblique-angle-deposited AlN thin films using reactive synchronized HiPIMS