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Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented\b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). Bysystematically tuning the precursor molar flow rates, the epitaxial growth ofcoherently strained \b{eta}-(AlxGa1-x)2O3 films are demonstrated with up to 25%Al compositions as evaluated by high resolution x-ray diffraction (XRD). Theasymmetrical reciprocal space mapping confirms the growth of coherent\b{eta}-(AlxGa1-x)2O3 films (x < 25%) on (001) \b{eta}-Ga2O3 substrates. Whilethe films show smooth surface morphologies, the alloy inhomogeneity with localsegregation of Al along (-201) plane is observed from atomic resolution STEMimaging, resulting in wavy and inhomogeneous interfaces in\b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 superlattice structure. Room temperatureRaman spectra of \b{eta}-(AlxGa1-x)2O3 films show similar characteristics peaksas (001) \b{eta}-Ga2O3 substrate without obvious Raman shifts for films withdifferent Al compositions. Atom probe tomography (APT) was used to investigatethe atomic level structural chemistry with increasing Al content in the\b{eta}-(AlxGa1-x)2O3 films. A monotonous increase in chemical heterogeneity isobserved from the in-plane Al/Ga distributions which was further confirmed viastatistical frequency distribution analysis (FDA). Although the films exhibitalloy fluctuations, n-type doping with good electrical properties aredemonstrated for films with various Al compositions. The determined valence andconduction band offsets at \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 heterojunctionsusing x-ray photoelectron spectroscopy (XPS) reveal the formation of type-II(staggered) band alignment.

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates