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Silicon-nitride-on-insulator photonic circuits have seen tremendous advancesin many applications, such as on-chip frequency combs, Lidar,telecommunications, and spectroscopy. So far, the best film quality has beenachieved with low pressure chemical vapor deposition (LPCVD) andhigh-temperature annealing (1200 {\deg}C). However, high processing temperatureposes challenges to the cointegration of Si3N4 with pre-processed siliconelectronic and photonic devices, lithium niobate on insulator (LNOI), andGe-on-Si photodiodes. This limits LPCVD as a front-end-of-line process. Here,we demonstrate ultralow-loss Silicon nitride photonics based onroom-temperature reactive sputtering. Propagation losses as low as 5.4 dB/mafter 400 {\deg}C annealing and 3.5 dB/m after 800 {\deg}C annealing areachieved, enabling ring resonators with more than 10 million optical qualityfactors. To the best of our knowledge, these are the lowest propagation lossesachieved with low temperature silicon nitride. This ultralow loss enablesthreshold powers for optical parametric oscillations to 1.1 mW and enables thegeneration of bright soliton frequency combs at 1.3 and 1.5 {\mu}m. Our workfeatures a full complementary metal oxide semiconductor (CMOS) compatibilitywith front-end silicon electronics and photonics, and has the potential forhybrid 3D monolithic integration with III-V-on-Si integrated lasers, and LNOI.

Room-Temperature Sputtered Ultralow-loss Silicon Nitride for Hybrid Photonic Integration