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Capacitance-voltage (CV) measurements are a widely used technique in silicondetector physics. It gives direct information about the full depletion voltageand the effective doping concentration. However, for highly irradiated sensors,the measured data differs significantly from the usual shape which makes theextraction of the afore mentioned parameters less precise to not possible. Wepresent an explanation for the obseved frequency dependence and based on that,a method to extract the desired sensor parameters.

Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors