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Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly beenin phase change memory and thermoelectric power generation. In this article, westudy the electronic structure of the GeTe by first-principles calculations.The theoretical direct bandgap of GeTe was found to be 0.69 eV which is veryclose to the experimental value. Then, we demonstrate a single-junction GeTethermophotovoltaic (TPV) cell based on device transport model with npstructure. The device was optimized for the higher performance of the TPV cell.The GeTe TPV cell exhibited an efficiency of 7.9% with JSC=16.16 A/cm2,VOC=0.360 V and FF=75.51%, respectively. These results indicate that GeTe couldbe a promising material for the fabrication of efficient TPV cell.

Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell