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The recombination rate in the space charge region (SCR) of a silicon-basedbarrier structure with long Shockley-Reed-Hall lifetime is calculatedtheoretically taking into account the concentration gradient of excesselectron-hole pairs in the base region. The effects of the SCR lifetime and theapplied voltage on the structure's ideality factor are analyzed. The idealityfactor is significantly reduced by the concentration gradient of electron-holepairs. This mechanism provides an increase of the effective lifetime comparedto the case when it is insignificant, which is realized at sufficiently lowpair concentrations. The theoretical results are shown to be in agreement withexperimental data.

Space-charge region recombination in monocrystalline silicon-based  barrier structures with long lifetimes and its impact on key characteristics  of high-efficiency solar cells