English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Here, we optimized the annealing temperature of HZO/TiN thin filmheterostructure via multiscale analysis of remnant polarization,crystallographic phase, minimum ferroelectric domain size, and average grainsize. We found that the remnant polarization was closely related to therelative amount of the orthorhombic phase whereas the minimum domain size wasto the relative amount of the monoclinic phase. The minimum domain size wasobtained at the annealing temperature of 500$^\cird$C while the optimum remnantpolarization and capacitance at the annealing temperature of 600$^\circ$C. Weconclude that the minimum domain size is more important than the sheermagnitude of remnant polarization considering the retention and fatigue ofswitchable polarization in nanoscale ferroelectric devices. Our results areexpected to contribute to the development of ultra-low-power logic transistorsand next-generation non-volatile memory devices.

Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia