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We developed a cryogenic temperature deposition process for high-performanceCoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidizedsilicon wafers. The effect of the deposition temperature of the CoFeB layers onthe nanostructure, magnetic and magneto-transport properties of the MTJs wereinvestigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PMA) of 214 uJ/m2 and a voltage-controlledmagnetic anisotropy (VCMA) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PMA and VCMA, respectively, compared to the case ofroom-temperature deposition of CoFeB. The improvement in the MTJ properties wasnot simply due to the morphology of the MTJ films. The interface-sensitivemagneto-transport properties indicated that interfacial qualities such asintermixing and oxidation states at the MgO/CoFeB interfaces were improved bythe cryogenic temperature deposition. Cryogenic-temperature sputteringdeposition is expected to be a standard manufacturing process fornext-generation magnetoresistive random-access memory.

Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers