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Electroluminescence properties of epitaxially grown n-ZnO/p-GaNpn-heterojunctions are investigated as functions of applied bias andtemperature. The study reveals the existence of indirect interfacial excitonsat sufficiently low temperatures. Electroluminescence feature associated withthese excitons redshifts with increasing forward bias. It has been found thatthe binding energy of these entities can be controlled through applied forwardbias and can even be made higher than that of the excitons in ZnO bulk (60meV). However, formation of these excitons becomes unsustainable when eitherthe applied bias or the temperature crosses a threshold. This has beenexplained in terms of leakage and thermal escape of electrons (holes) into GaN(ZnO) side. Calculations for the band diagram and the binding energy of thesespatially indirect electron-hole coulomb-coupled entities are carried out.Theoretical results are found to explain the experimental findings quite well.

Spatially indirect interfacial excitons in n-ZnO/p-GaN heterostructures