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The influence of illumination on a high mobility two-dimensional electron gaswith high concentration of charge carriers is studied in selectively dopedsingle GaAs quantum wells with short-period AlAs/GaAs superlattice barriers ata temperature T = 4.2 K in magnetic fields B < 2 T. It is shown thatillumination at low temperatures in the studied heterostructures leads to anincrease in the concentration, mobility, and quantum lifetime of electrons. Anincrease in the quantum lifetime due to illumination of single GaAs quantumwells with modulated superlattice doping is explained by a decrease in theeffective concentration of remote ionized donors.

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers