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Hybrid heterostructure based phototransistors are attractive owing to theirhigh gain induced by photogating effect. However, the absence of an in-planebuilt-in electric field in the single channel layer transistor results in arelatively higher dark current and require a large operating gate voltage ofthe device. Here, we report novel air-stable cesium lead iodide/tungstendi-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure basedphoto-field-effect-transistors (photo-FETs) with asymmetric metal electrodes(Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with aresponsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Auinterface) induced rectification characteristics in the channel accompanied bythe excellent photogating effect from solution-processed $\alpha$-phaseCsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetectionwith a very high responsivity (~104 A/W) and excellent sensitivity (~106). Mostinterestingly, the device shows superior performance even under high humidity(50-65%) conditions owing to the formation of cubic $\alpha$-phase CsPbI$_3$nanocrystals with a relatively smaller lattice constant (a = 6.2315 {\AA}) andfilling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$layer, thus protecting it from environmental degradation. These resultsemphasise a novel strategy for developing mixed dimensional hybridheterostructure based phototransistors for futuristic integratednano-optoelectronic systems.

Charge transfer mediated giant photo-amplification in air-stable  $\alpha$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric  contacts