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The recent discovery of strong spin Hall effects (SHE) in 2D layeredtopological semimetals has attracted intensive attention due to its exoticelectronic properties and potential applications in spintronic devices. In thispaper, we systematically study the topological properties and intrinsic SHE oflayered transition metal carbides $M_{2}\rm{C}$ ($M=\rm{V}, \rm{Nb}, \rm{Ta}$).The results show that both bulk and monolayer $M_{2}\rm{C}$ havesymmetry-protected nodal points (NPs) and lines (NLs) originating from the $d$band crossing near the Fermi level ($E_F$). The inclusion of SOC breaks thedegeneracy of NLs and NPs, contributing to large spin Hall conductivity (SHC)up to $\sim$1100 and $\sim$200 $(\hbar / e)(\Omega \mathrm{cm})^{-1}$ for bulkand monolayer Ta$_{2}$C, respectively. Remarkably, we find that magnitude ofSHC exhibits a significant enhancement by increasing the layer number. Foreight-layer Ta$_{2}$C, the maximum value of SHC can reach up to $\sim$600$(\hbar / e)(\Omega \mathrm{cm})^{-1}$, comparable to many reported 3Dtopological materials. Analysis of spin Berry curvature reveals that the largeSHC originates from layer-number-dependent nodal line structure near the $E_F$,in which the repeated crossover between valence and conduction bands createslarge amounts of NPs along the $\Gamma\rm{-K}$ route. Our findings not onlyprovide a new platform for experimental research of low-dimensional SHE, butalso suggest an effective way of realizing giant SHE by controlling layerthickness.

Layer-number-dependent spin Hall effects in transition metal monocarbides $M_{2}\rm{C}$ ($M=\rm{V}, \rm{Nb}, \rm{Ta}$)