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To realize a thermoelectric power generator, typically a junction between twomaterials with different Seebeck coefficient needs to be fabricated. Suchdifference in Seebeck coefficients can be induced by doping, which rendersdifficult when working with two-dimensional (2d) materials. Here, we employsubstrate effects to form a thermoelectric junction in ultra-thin few-layerMoS2 films. We investigated the junctions with a combination of scanningphotocurrent microscopy and scanning thermal microscopy. This allows us toreveal that thermoelectric junctions form across the substrate-engineeredparts. We attribute this to a gating effect induced by interfacial charges incombination with alterations in the electron-phonon scattering mechanisms. Thiswork demonstrates that substrate engineering is a promising strategy to developfuture compact thin-film thermoelectric power generators.

Single-material MoS$_{2}$ thermoelectric junction enabled by substrate engineering