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Nb3Sn and V3Si thin films are promising candidates as thin films for the nextgeneration of superconducting radio-frequency (SRF) cavities. However,sputtered films often suffer from stoichiometry and strain issues duringdeposition and post annealing. In this study, we explore the structural andchemical effects of thermal annealing, both in-situ and post-sputtering, onDC-sputtered Nb3Sn and V3Si films of varying thickness on Nb or Cu substrates,extending from our initial studies [1]. Through annealing at 950 {\deg}C, wesuccessfully enabled recrystallization of 100 nm thin Nb3Sn films on Nbsubstrate with stoichiometric and strain-free grains. For 2 um thick films, weobserved the removal of strain and a slight increase in grain size withincreasing temperature. Annealing enabled a phase transformation from unstableto stable structure on V3Si films, while we observed significant Sn loss in 2um thick Nb3Sn films after high temperature anneals. We observed similar Sn andSi loss on films atop Cu substrates during annealing, likely due to Cu-Sn andCu-Si phase generation and subsequent Sn and Si evaporation. These resultsencourage us to refine our process to obtain high-quality sputtered films forSRF use.

Thermal annealing of sputtered Nb3Sn and V3Si thin films for superconducting radio-frequency cavities