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Although vanadium dioxide (VO2) exhibits the most abrupt metal to insulatortransition (MIT) properties near room-temperature, the present regulation oftheir MIT functionalities is insufficient owing to the high complexity andsusception associated with V4+. Herein, we demonstrate a spark plasma assistedreactive sintering (SPARS) approach to simultaneously achieve in situ dopingand sintering of VO2 within largely short period (~10 minutes). This enableshigh convenience and flexibility in regulating the electronic structure of VO2via dopant elements covering Ti, W, Nb, Mo, Cr and Fe, leading to a wideadjustment in their metal to insulator transition temperature (TMIT) and basicresistivity. Furthermore, the mechanical strengths of the doped-VO2 weremeanwhile largely improved via the compositing effect of high melting-pointdopant oxide. The high adjustability in MIT properties and improved mechanicalproperties further paves the way towards practical applications of VO2 in powerelectronics, thermochromism and infrared camouflage.

Non-Equilibrium Spark Plasma Reactive Doping Enables Highly Adjustable Metal to Insulator Transitions and Improved Mechanical Stability for VO2