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Usually, resistive switching (RS) devices show digital RS memory (sharp SETand RESET process), which is most suitable for digital data storageapplications. Some RS devices also manifest ideal memristive behavior or analogmemory characteristics (gradual change in resistance states). The analog RSproperties of memristive devices widen their application domain to a muchbroader field of neuromorphic computing. The tunability of memristive devicesto digital or analog memory applications greatly depends upon the switchingmedium. In this work, we report a comparative study on RS properties of twokinds of memristive devices based upon copper (I) thiocyanate (CuSCN) and asolid polymer electrolyte (SPE) made up of CuSCN as ionic moieties inpolyethylene oxide (PEO). The device (ITO/CuSCN/Cu), prepared by spin-coatingCuSCN layer between ITO and copper electrode, shows simultaneous analog anddigital RS characteristics. The RS property of the device is tunable by varyingthe thickness of the CuSCN layer. The current-voltage characteristics revealthat devices prepared at 3000 rpm (thicker) during the spin-coating show onlydigital bipolar RS memory. In comparison, the devices deposited at 4000 rpm(thinner) show both analog and digital RS memory. The conduction mechanismresponsible for RS behavior in CuSCN-based devices is Schottky emissionmediated charge trapping and de-trapping at the interfacial states.Contrastingly, when the same CuSCN is used as the electrolyte in SPE film, thedevice only shows bipolar digital non-volatile memory characteristics. The RSbehavior is due to the electrochemical metallization (ECM) mechanism. The ONand OFF states are achieved by the formation and rupture of copper filamentsdue to the redox reactions at the interface.

Contrasting Analog and Digital Resistive Switching Memory  Characteristics in Solution-Processed Copper (I) Thiocyanate and Its Polymer  Electrolyte Based Memristive Devices